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Product Detailed Parameters
- Description:MOSFET P-CH 100V 230MA E-LINE
- Series:-
- Mfr:Diodes Incorporated
- Package:Tape & Reel (TR)
- FET Type:P-Channel
- Technology:MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):100 V
- Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):10V
- Rds On (Max) @ Id, Vgs:8Ohm @ 375mA, 10V
- Vgs(th) (Max) @ Id:3.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:-
- Vgs (Max):±20V
- Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 25 V
- FET Feature:-
- Power Dissipation (Max):700mW (Ta)
- Operating Temperature:-55°C ~ 150°C (TJ)
- Grade:-
- Qualification:-
- Mounting Type:Through Hole
- Supplier Device Package:E-Line (TO-92 compatible)
- Package / Case:E-Line-3
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Buying Guide
Diodes Incorporated ZVP2110ASTOB is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (MOSFET P-CH 100V 230MA E-LINE), Packaging (Tape & Reel (TR)), Temperature (-55°C ~ 150°C (TJ)), Package/case (E-Line-3), and Mounting (Through Hole).
- For ZVP2110ASTOB, make sure the supply current (230mA (Ta)) fits your power budget in all modes.
- Validate the operating temperature range (-55°C ~ 150°C (TJ)) for your environment and margin.
- Check Drain to Source Voltage (Vdss) (100 V) against the datasheet conditions and your system-level constraints.
- For ZVP2110ASTOB, if Single FETs, MOSFETs is moving to a second source, the better candidates usually stay comfortable inside the same fit, interface, and use conditions.
- For ZVP2110ASTOB in Single FETs, MOSFETs, a practical substitute is usually the one that behaves similarly in the actual switching position on the board (key constraints: package E-Line-3).
- Alternate decisions stay clearer when must-match attributes are kept distinct from features that are only nice to have.
- Parts that stay convincing across temperature -55°C ~ 150°C (TJ) are usually safer than options that only look good at nominal values.
What should I verify before using ZVP2110ASTOB in production?
Confirm footprint/pinout, min/max ratings, operating temperature, and the datasheet test conditions behind key specifications.
What Rds On (Max) @ Id, Vgs is listed for ZVP2110ASTOB?
8Ohm @ 375mA, 10V
Which supply current is specified for ZVP2110ASTOB?
230mA (Ta)
What Drive Voltage (Max Rds On, Min Rds On) is listed for ZVP2110ASTOB?
10V
Application Scenarios
For many Single FETs, MOSFETs designs, Diodes Incorporated ZVP2110ASTOB is vetted against electrical margins, thermal headroom, and mechanical integration before the BOM is frozen. Engineers typically treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI. They are often used when a design must handle inductive loads, fast edges, or high current in compact footprints. A good discrete switch choice improves efficiency and robustness while keeping thermal design and qualification predictable. In power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability. In DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI.
Compatibility Advice
- For Diodes Incorporated ZVP2110ASTOB, validate dv/dt stress and Miller effects so switching does not trigger unintended turn-on under real parasitics. This reduces the chance that a substitute only works under a friendlier bench setup than the shipped product will ever see.
- Before locking the BOM, confirm SOA and avalanche margins under the real waveform, because parasitics decide peak stress. This keeps integration from depending on typical-only conditions.
Project Fit
- Diodes Incorporated ZVP2110ASTOB is harder to defend in Single FETs, MOSFETs when layout and parasitics cannot be controlled enough to keep transient stress predictable because the integration depends on constraints that cannot be controlled across builds.
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