ChipApex | Global Electronic Components Supplier
SI3451DV-T1-GE3
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 20V 2.8A 6TSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：115mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.1 nC @ 5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta), 2.1W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：6-TSOP
- Package / Case：SOT-23-6 Thin, TSOT-23-6
Download product information
Related recommended products
Buying Guide
Vishay Siliconix SI3451DV-T1-GE3 is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (MOSFET P-CH 20V 2.8A 6TSOP), Series (TrenchFET®), Packaging (Tape & Reel (TR)), Temperature (-55°C ~ 150°C (TJ)), and Package/case (SOT-23-6 Thin, TSOT-23-6).
Selection Notes
- For SI3451DV-T1-GE3, confirm Rds On (Max) @ Id, Vgs (115mOhm @ 2.6A, 4.5V) and ensure it matches your integration requirements.
- Verify the package/case (SOT-23-6 Thin, TSOT-23-6) fits your mechanical constraints and assembly process.
- Make sure the supply current (2.8A (Tc)) fits your power budget in all modes.
Alternates & Substitutions
- For production substitutions involving SI3451DV-T1-GE3 in Single FETs, MOSFETs, the cleanest alternate is usually the one that keeps the same product-facing behavior with the fewest new assumptions.
- For SI3451DV-T1-GE3 in Single FETs, MOSFETs, the best substitutes usually match how they are used in the power path, not only headline voltage and current limits (key constraints: package SOT-23-6 Thin, TSOT-23-6).
- Keeping package/case SOT-23-6 Thin, TSOT-23-6, supplier package 6-TSOP, mounting Surface Mount consistent usually matters more than a small paper advantage elsewhere.
- Compare not just the headline numbers but also the datasheet conditions behind them so paper matches do not turn into application mismatches.
FAQ
What should I compare when selecting an alternate for SI3451DV-T1-GE3?
Compare footprint/pinout, key electrical limits, temperature range, and interface requirements, then validate under worst-case conditions.
Can you confirm the package/case for SI3451DV-T1-GE3?
SOT-23-6 Thin, TSOT-23-6
What Technology is listed for SI3451DV-T1-GE3?
MOSFET (Metal Oxide)
Which Drain to Source Voltage (Vdss) is specified for SI3451DV-T1-GE3?
20 V
Application Scenarios
For many Single FETs, MOSFETs designs, Vishay Siliconix SI3451DV-T1-GE3 is vetted against electrical margins, thermal headroom, and mechanical integration before the BOM is frozen. MOSFET selection typically balances RDS(on), gate charge, switching loss, package parasitics, and thermal impedance under the intended PWM and load profile. Design teams typically favor switches with clear SOA and repeatable behavior because it simplifies protection design and validation. They switch or control current and voltage, enabling load control, power conversion, and signal conditioning at the component level. In automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. That usually means checking the part under the same power, load, temperature, and interface conditions it will see after release. This approach keeps the important behaviors tied to checks that can still be measured across manufacturing variance and operating conditions.
Compatibility Advice
- For Vishay Siliconix SI3451DV-T1-GE3, where substitutions are likely, confirm SOA and transient margins under the real waveform, because layout and inductance decide peak stress. This reduces the chance that a substitute only works under a friendlier bench setup than the shipped product will ever see.
- During bring-up, confirm turn-off behavior under worst-case inductance so overshoot stays bounded without relying on lucky wiring. This keeps the acceptance limits tied to a test method the team can rerun later.
Project Fit
- Vishay Siliconix SI3451DV-T1-GE3 makes sense in Single FETs, MOSFETs work when the project has a clear protection strategy and can validate short-circuit and overvoltage behavior on the assembled system.
- Avoid relying on Vishay Siliconix SI3451DV-T1-GE3 in Single FETs, MOSFETs designs when parasitics and switching stress cannot be measured, so SOA and transient margins remain unproven because the critical behavior cannot be rechecked later with the same wiring, loading, and pass/fail limits.
