ChipApex | Global Electronic Components Supplier
SI1079X-T1-GE3
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 1.44A SC89-6
- Series：-
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：1.44A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：100mOhm @ 1.4A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：26 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：750 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：330mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SC-89-6
- Package / Case：SOT-563, SOT-666
Download product information
Related recommended products
Buying Guide
Vishay Siliconix SI1079X-T1-GE3 is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (MOSFET P-CH 30V 1.44A SC89-6), Packaging (Tape & Reel (TR), Cut Tape (CT)), Temperature (-55°C ~ 150°C (TJ)), Package/case (SOT-563, SOT-666), and Mounting (Surface Mount).
Selection Notes
- For SI1079X-T1-GE3, double-check the mounting type (Surface Mount) for your intended installation method.
- Confirm the supply current (1.44A (Ta)) is acceptable for standby and active operation.
- Verify the operating temperature range (-55°C ~ 150°C (TJ)) and derate as needed in your application.
- Confirm Input Capacitance (Ciss) (Max) @ Vds (750 pF @ 15 V) is suitable for your use case and operating conditions.
Alternates & Substitutions
- For production substitutions involving SI1079X-T1-GE3 in Single FETs, MOSFETs, the cleanest alternate is usually the one that keeps the same product-facing behavior with the fewest new assumptions.
- For SI1079X-T1-GE3 in Single FETs, MOSFETs, focus on alternates that keep the same switching role, control drive expectations, and thermal use case (key constraints: package SOT-563, SOT-666).
- Keeping package/case SOT-563, SOT-666, supplier package SC-89-6, mounting Surface Mount consistent usually matters more than a small paper advantage elsewhere.
- When several alternates look close for Single FETs, MOSFETs, use single, FETS, mosfets to decide which option still matches the original application best.
FAQ
What should I verify before using SI1079X-T1-GE3 in production?
Confirm footprint/pinout, min/max ratings, operating temperature, and the datasheet test conditions behind key specifications.
Which Drain to Source Voltage (Vdss) is specified for SI1079X-T1-GE3?
30 V
How is SI1079X-T1-GE3 packaged?
Tape & Reel (TR), Cut Tape (CT)
Can you confirm the Input Capacitance (Ciss) (Max) @ Vds for SI1079X-T1-GE3?
750 pF @ 15 V
Application Scenarios
For Vishay Siliconix SI1079X-T1-GE3 in Single FETs, MOSFETs, start with the margins that are hardest to recover later, then confirm the assembled design still behaves the same across real builds and service conditions. Selection focuses on operating envelope (breakdown voltage/current), conduction loss, switching behavior, package parasitics, and thermal impedance under realistic waveforms. They are typically used when a design must handle inductive loads, fast edges, or high current in compact footprints. In automotive electronics, discrete devices are qualified for transients, vibration, and predictable failure modes over thermal cycling. In DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI. In power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability. Engineers generally treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI.
Compatibility Advice
- When qualifying Vishay Siliconix SI1079X-T1-GE3, check gate/base charge and transition timing so switching loss and EMI are predictable across substitutions with the final enclosure and cabling.
Project Fit
- Vishay Siliconix SI1079X-T1-GE3 is easier to justify in Single FETs, MOSFETs designs when the team can control layout parasitics so gate-drive behavior remains repeatable in production.
