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NVMFWS4D0N04XMT1G
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Product Detailed Parameters
- Description：SINGLE N-CHANNEL POWER MOSFET 40
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：784 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：43W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：5-DFNW (4.9x5.9) (8-SOFL-WF)
- Package / Case：8-PowerTDFN, 5 Leads
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Buying Guide
onsemi NVMFWS4D0N04XMT1G is a component in Single FETs, MOSFETs category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (SINGLE N-CHANNEL POWER MOSFET 40), Packaging (Tape & Reel (TR)), Temperature (-55°C ~ 175°C (TJ)), Package/case (8-PowerTDFN, 5 Leads), and Mounting (Surface Mount, Wettable Flank).
Selection Notes
- For NVMFWS4D0N04XMT1G, confirm the supply current (80A (Tc)) is acceptable for standby and active operation.
- Verify the operating temperature range (-55°C ~ 175°C (TJ)) and derate as needed in your application.
- Confirm Vgs(th) (Max) @ Id (3.5V @ 30µA) is suitable for your use case and operating conditions.
- Double-check the mounting type (Surface Mount, Wettable Flank) for your intended installation method.
Alternates & Substitutions
- For NVMFWS4D0N04XMT1G, when choices stay close in Single FETs, MOSFETs, the stronger fit is usually the candidate that asks the least from layout, firmware, mechanics, and field use.
- For NVMFWS4D0N04XMT1G in Single FETs, MOSFETs, a practical substitute is usually the one that behaves similarly in the actual switching position on the board (key constraints: package 8-PowerTDFN, 5 Leads).
- Candidates that preserve package/case 8-PowerTDFN, 5 Leads, supplier package 5-DFNW (4.9x5.9) (8-SOFL-WF), mounting Surface Mount, Wettable Flank are usually easier to treat as true drop-in alternates on the existing board.
- The strongest drop-in candidate is often the one that changes package 8-PowerTDFN, 5 Leads the least.
FAQ
Who is the manufacturer of NVMFWS4D0N04XMT1G?
onsemi
What should I compare when selecting an alternate for NVMFWS4D0N04XMT1G?
Compare footprint/pinout, key electrical limits, temperature range, and interface requirements, then validate under worst-case conditions.
What is the supply current of NVMFWS4D0N04XMT1G?
80A (Tc)
Can you confirm the Qualification for NVMFWS4D0N04XMT1G?
AEC-Q101
Application Scenarios
In real deployments, for many Single FETs, MOSFETs designs, onsemi NVMFWS4D0N04XMT1G is vetted against electrical margins, thermal headroom, and mechanical integration before the BOM is frozen. A good discrete switch choice improves efficiency and robustness while keeping thermal design and qualification predictable. Good switch selection keeps losses and temperature rise predictable, which makes qualification and derating easier to defend. In power adapters, switching stages balance conduction loss and switching loss, where gate drive and thermal design determine repeatability. In automotive modules, MOSFETs tolerate transients and inductive kickback while meeting EMI constraints on dense harnessed systems. Engineers typically treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI.
Compatibility Advice
- When qualifying onsemi NVMFWS4D0N04XMT1G, in practice, validate gate-drive loop inductance and Miller effects so switching does not trigger unintended turn-on with the real source, load, and wiring.
- Verify clamp/snubber behavior so overshoot is bounded in production wiring and harnesses on the assembled PCB.
- For field stability, validate that the driver, clamp, and protection thresholds remain stable across temperature and supply variation. Record the exact load, wiring, and limits so the same evidence can be regenerated during ECO or second-source review.
Project Fit
- Onsemi NVMFWS4D0N04XMT1G is worth shortlisting for Single FETs, MOSFETs when the design needs measurable SOA and transient margins rather than typical-only assumptions.
- Onsemi NVMFWS4D0N04XMT1G is harder to defend in Single FETs, MOSFETs when snubber or clamp behavior is undefined, so overvoltage and EMI risk remains open because the critical behavior cannot be rechecked later with the same wiring, loading, and pass/fail limits.
