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IGK080B041SXUSA1
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Product Detailed Parameters
- Description：MV GAN DISCRETES
- Series：CoolGaN™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：-
- Technology：GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：5V
- Rds On (Max) @ Id, Vgs：8mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：-
- Input Capacitance (Ciss) (Max) @ Vds：387 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：-
- Operating Temperature：-40°C ~ 125°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SG-UFWLB-16-2
- Package / Case：16-UFBGA, WLBGA
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Buying Guide
Infineon Technologies IGK080B041SXUSA1 is sourced in Single FETs, MOSFETs category when teams want clear constraints and a repeatable validation path. Key specs include Description (MV GAN DISCRETES), Series (CoolGaN™), Packaging (Tape & Reel (TR)), Temperature (-40°C ~ 125°C (TJ)), and Package/case (16-UFBGA, WLBGA).
Selection Notes
- For IGK080B041SXUSA1, validate the operating temperature range (-40°C ~ 125°C (TJ)) for your environment and margin.
- Check Drain to Source Voltage (Vdss) (40 V) against the datasheet conditions and your system-level constraints.
- Ensure the package/case (16-UFBGA, WLBGA) and land pattern match your PCB layout before procurement.
- Check the supply current (14A (Tc)) in your power budget and thermal plan.
Alternates & Substitutions
- For production substitutions involving IGK080B041SXUSA1 in Single FETs, MOSFETs, the cleanest alternate is usually the one that keeps the same product-facing behavior with the fewest new assumptions.
- For IGK080B041SXUSA1 in Single FETs, MOSFETs, focus on alternates that keep the same switching role, control drive expectations, and thermal use case (key constraints: package 16-UFBGA, WLBGA).
- Keeping package/case 16-UFBGA, WLBGA, supplier package SG-UFWLB-16-2, mounting Surface Mount consistent usually matters more than a small paper advantage elsewhere.
- When the operating envelope remains temperature -40°C ~ 125°C (TJ), the substitute is more likely to behave like the original part in service.
FAQ
What should I compare when selecting an alternate for IGK080B041SXUSA1?
Compare footprint/pinout, key electrical limits, temperature range, and interface requirements, then validate under worst-case conditions.
What operating temperature range is listed for IGK080B041SXUSA1?
-40°C ~ 125°C (TJ)
What Rds On (Max) @ Id, Vgs is listed for IGK080B041SXUSA1?
8mOhm @ 10A, 5V
What is the Technology of IGK080B041SXUSA1?
GaNFET (Gallium Nitride)
Application Scenarios
Infineon Technologies IGK080B041SXUSA1 is a common choice in Single FETs, MOSFETs applications where the goal is to keep validation repeatable and avoid edge-case surprises during bring-up. Selection focuses on operating envelope (breakdown voltage/current), conduction loss, switching behavior, package parasitics, and thermal impedance under realistic waveforms. They are often used when a design must handle inductive loads, fast edges, or high current in compact footprints. In power adapters, switching behavior influences efficiency, heat, and audible noise across operating modes. In DC-DC converters and load switches, MOSFET selection sets efficiency and thermal headroom, and layout strongly influences ringing and EMI. In motor control and robotics, MOSFET stages must survive stalls and reversals, so SOA and transient strategy are validated under real waveforms. Engineers typically treat gate drive, layout, and SOA as system-level constraints because they dominate switching behavior and EMI.
Compatibility Advice
- For Infineon Technologies IGK080B041SXUSA1, validate gate/base drive assumptions and switching transitions so losses and EMI stay inside the system budget. This keeps the acceptance limits tied to a test method the team can rerun later.
Project Fit
- Infineon Technologies IGK080B041SXUSA1 is worth shortlisting for Single FETs, MOSFETs when the team can validate switching transitions, dv/dt, and thermal rise under the real load waveform.
- Infineon Technologies IGK080B041SXUSA1 is a weaker fit for Single FETs, MOSFETs when snubber and clamp behavior is undefined, leaving overshoot and EMI risk open because the key behaviors cannot be confirmed on the assembled system.
