HERAF807G C0G

HERAF807G C0G

  • Description:DIODE STANDARD 800V 8A ITO220AC
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube

SKU:dad8e4cafbdc Category: Brand:

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Product Detailed Parameters

  • Description:DIODE STANDARD 800V 8A ITO220AC
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tube
  • Technology:Standard
  • Voltage - DC Reverse (Vr) (Max):800 V
  • Current - Average Rectified (Io):8A
  • Voltage - Forward (Vf) (Max) @ If:1.7 V @ 8 A
  • Speed:Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr):80 ns
  • Current - Reverse Leakage @ Vr:10 µA @ 800 V
  • Capacitance @ Vr, F:60pF @ 4V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-220-2 Full Pack
  • Supplier Device Package:ITO-220AC
  • Operating Temperature - Junction:-55°C ~ 150°C
  • Grade:-
  • Qualification:-

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HERAF807G C0G

Buying Guide
Summary

Taiwan Semiconductor Corporation HERAF807G-C0G is a component in Single Diodes category typically evaluated for fit, operating limits, and supportability in production. Key specs include Description (DIODE STANDARD 800V 8A ITO220AC), Packaging (Tube), Temperature (-55°C ~ 150°C), Package/case (TO-220-2 Full Pack), and Mounting (Through Hole).

Selection Notes
  • For HERAF807G-C0G, confirm Voltage - Forward (Vf) (Max) @ If (1.7 V @ 8 A) meets your design constraints and system-level expectations.
  • Double-check the mounting type (Through Hole) for your intended installation method.
  • Confirm current consumption (8A) is within your worst-case power budget.
Alternates & Substitutions
  • For production substitutions involving HERAF807G-C0G in Single Diodes, the cleanest alternate is usually the one that keeps the same product-facing behavior with the fewest new assumptions.
  • For HERAF807G-C0G in Single Diodes designs, a practical second source is usually the option that changes the fewest assumptions in layout, firmware, or mating hardware (key constraints: package TO-220-2 Full Pack, frequency 60pF @ 4V, 1MHz).
  • Keeping package/case TO-220-2 Full Pack, supplier package ITO-220AC, mounting Through Hole consistent usually matters more than a small paper advantage elsewhere.
  • A strong second source usually matches how the original part is used in the product, not only how it is described in a parametric table.
FAQ

What should I compare when selecting an alternate for HERAF807G-C0G?
Compare footprint/pinout, key electrical limits, temperature range, and interface requirements, then validate under worst-case conditions.

What Reverse Recovery Time (trr) is listed for HERAF807G-C0G?
80 ns

Which package/case is listed for HERAF807G-C0G?
TO-220-2 Full Pack

What operating frequency does HERAF807G-C0G run at?
60pF @ 4V, 1MHz

Application Scenarios

In the Single Diodes category, Taiwan Semiconductor Corporation HERAF807G-C0G is often evaluated by how well it fits electrical, thermal, and mechanical constraints in the target system. They are generally used for rectification and current steering where recovery behavior and leakage influence heat and noise in real operation. They often appear in power stages for rectification and polarity protection where predictable recovery and thermal margins matter. A few targeted measurements can quickly show whether the design is margin-driven or tuning-driven. In battery systems, reverse-polarity protection and clamping improves safety during servicing and field wiring mistakes. In welding and industrial heating, high-current rectification stages see pulsed loading where cooling and current sharing determine robustness. The net effect is fewer integration surprises and test evidence that still makes sense outside a best-case lab setup.

Compatibility Advice
  • In Taiwan Semiconductor Corporation HERAF807G-C0G integration, check thermal path assumptions with the real mounting and airflow so junction temperature stays predictable after heat soak across temperature and supply corners.
Project Fit
  • Taiwan Semiconductor Corporation HERAF807G-C0G is worth shortlisting for Single Diodes when the design needs bounded fault energy and predictable protection coordination across substitutions.
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