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BU25H08-M3/A
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Product Detailed Parameters
- Description：BRIDGE RECT 1PHASE 800V 3.5A BU
- Series：isoCink+™
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tray
- Diode Type：Single Phase
- Technology：Standard
- Voltage - Peak Reverse (Max)：800 V
- Current - Average Rectified (Io)：3.5 A
- Voltage - Forward (Vf) (Max) @ If：1.05 V @ 12.5 A
- Current - Reverse Leakage @ Vr：5 µA @ 800 V
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：4-SIP, BU
- Supplier Device Package：isoCINK+™ BU
- Grade：-
- Qualification：-
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Buying Guide
Vishay General Semiconductor - Diodes Division BU25H08-M3-A is used in Bridge Rectifiers category where integration and verification need to stay predictable. Key specs include Description (BRIDGE RECT 1PHASE 800V 3.5A BU), Series (isoCink+™), Packaging (Tray), Temperature (-55°C ~ 175°C (TJ)), and Package/case (4-SIP, BU).
Selection Notes
- For BU25H08-M3-A, confirm the supply current (3.5 A) is acceptable for standby and active operation.
- Verify the operating temperature range (-55°C ~ 175°C (TJ)) and derate as needed in your application.
- Validate Current - Average Rectified (Io) (3.5 A) under the expected test conditions in your application.
- Double-check the mounting type (Through Hole) for your intended installation method.
Alternates & Substitutions
- For BU25H08-M3-A, when choices stay close in Bridge Rectifiers, the stronger fit is usually the candidate that asks the least from layout, firmware, mechanics, and field use.
- For BU25H08-M3-A in Bridge Rectifiers, a strong substitute usually preserves the same polarity behavior and protection intent in the product (key constraints: package 4-SIP, BU).
- Parts that keep package/case 4-SIP, BU, supplier package isoCINK+™ BU, mounting Through Hole aligned are typically the strongest drop-in candidates unless a PCB change is acceptable.
- Good substitutes normally keep the visible function unchanged and move any trade-off into margins your design already has.
FAQ
Which Technology is specified for BU25H08-M3-A?
Standard
What is the Diode Type of BU25H08-M3-A?
Single Phase
What current consumption is specified for BU25H08-M3-A?
3.5 A
Can you confirm the Current - Reverse Leakage @ Vr for BU25H08-M3-A?
5 µA @ 800 V
Application Scenarios
For Vishay General Semiconductor - Diodes Division BU25H08-M3-A used in Bridge Rectifiers designs, engineers usually narrow the choice by checking the failure modes, measurement access, and constraints that still matter after layout. They are often used in rectifier and steering paths where surge handling and leakage under temperature decide reliability. Correct clamping and rectification parts reduce downtime and prevent cascading damage. In welding and industrial heating, high-current rectification stages see pulsed loading where cooling and current sharing determine robustness. In traction and industrial drives, rectifier modules and diode stages must tolerate surge and thermal cycling while maintaining stable leakage and recovery behavior.
Compatibility Advice
- In Vishay General Semiconductor - Diodes Division BU25H08-M3-A integration, ensure creepage/clearance and insulation coordination match the system voltage and contamination environment on the assembled PCB.
Project Fit
- Vishay General Semiconductor - Diodes Division BU25H08-M3-A becomes harder to justify for Bridge Rectifiers when fault behavior and protection coordination are not defined, increasing the risk of unpredictable failures because the integration depends on constraints that cannot be controlled across builds.
- Vishay General Semiconductor - Diodes Division BU25H08-M3-A is worth shortlisting for Bridge Rectifiers when the team can bound wiring inductance and thermal paths so worst-case margins remain stable in the enclosure.
